Dr. Brandon Mitchell
University Address: 155 University Ave, West Chester, PA, 19383
University E-mail: [email protected]
EDUCATION
Lehigh University, Bethlehem, PA
Ph.D. in Physics April 2014
Dissertation: The Role of Defects on the Magneto-Optical Properties of Rare Earth Doped Gallium Nitride
Advisor: Volkmar Dierolf
Committee: Nelson Tansu, W. Beall Fowler, Michael Stavola, and John Huennekens
Lehigh University, Bethlehem, PA January 2012
M.S. in Physics
SUNY Fredonia, Fredonia, NY
B.A. in Adolescence Ed. May 2010
Area of concentration: Physics
Graduated: Summa Cum Laude
AWARDS
WCU Spotlight on Research Honoree – West Chester University 2023
WCU Spotlight on Research Honoree – West Chester University 2022
WCU Distinguished Research Award – West Chester University 2021
WCU Spotlight on Research Honoree – West Chester University 2019
WCU Spotlight on Research Honoree – West Chester University 2017
Young Scientist Award 2015
Sherman Fairchild Fellow 2012 – 2014
GAANN Fellow (Education) 2010 – 2011
Mihoko Yoshida Award Spring 2011
Hack Arroe Award Spring 2010
Physics Department Scholarship Award Spring 2009
PROFESSIONAL EXPERIENCE
Professor of Physics 2023 - Present
West Chester University, West Chester, PA, USA
Visiting Associate Professor of Materials Science 2022 - Present
Osaka University, Suita, Osaka, Japan
Associate Professor of Physics 2021 - 2023
West Chester University, West Chester, PA, USA
Visiting Research Scholar 2021 - Present
Lehigh University, Bethlehem, PA, USA
Director of Undergraduate Outreach & Engagement 2019 - Present
Center for Nanomaterials, West Chester University, West Chester, PA, USA
Assistant Professor of Physics 2016 - Present
West Chester University, West Chester, PA, USA
Assistant Professor of Physics 2014 - 2016
University of Mount Union, Alliance, OH, USA
Visiting Researcher/Research Professor 2014 - 2022 Osaka University, Suita, Osaka, Japan
PATENTS
INTERNAL/EXTERNAL FUNDING
NSF ExpandQISE (Award #2328540) - $797,576 2023
NSF S-STEM (Award # 2322670) - $99,993 2023
NSF MRI (Award # 2319135) - $320,463 2023
DOE (Award #S215K230003) - $716,000 2023
NSF MRI (Award #2216272) - $391,730 2022
WCU RIMS - $3,999 2021
NSF RUI (Award #1748439) - $372,276 2021
NSF RUI (Award #2129183) - $449,600 2021
NSF S-STEM (Award #2028230) - $999,644 2021
WCU Distinguished Researcher Award - $2,000 2021
WCU Provost Research Grant - $9985 2021
WCU-COURSE Grant - $1,950 2020
WCU RIMS - $6,609 2019
WCU University Research Fund - $7,000 2017
PUBLICATIONS AND PAPERS In Progress:
1) A. Koizumi, B. Mitchell, V. Dierolf, and Y. Fujiwara, “Growth of Eu-doped GaN and its Magneto-Optical Properties,” in: Transition metal and rare earth doping of semiconductor materials: synthesis, magnetic properties, and room temperature spintronics, (ed. J. Zavada, I. Fergison, and V. Dierolf, Elsevier, UK, 2016).
2) N. Nepal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, and J. M. Zavada, “MOCVD growth of Er-doped III-N and optical-magnetic characterization,” in: Transition metal and rare earth doping of semiconductor materials: synthesis, magnetic properties, and room temperature spintronics, (ed. J. Zavada, I. Fergison, and V. Dierolf, Elsevier, UK, 2016).
Oral Presentations
“Control of Atomic Emission from Eu3+ ions Doped into GaN for Color-Tunable LED” B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, Y. Fujiwara, and V. Dierolf, SemiconNano 2019, Kobe, Japan. (INVITED)
“Incorporation site dependent excitation dynamics of Eu3+ ions in Eu-doped GaN,” V. Dierolf, B. Mitchell, D. Timmerman, T. Gregorkiewicz, and Y. Fujiwara, ICDS 2019, Seattle, WA.
Color-tunablility in Eu doped GaN LEDs Based on Atomic Emission Manipulation of Under Current Injection,” B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, V. Dierolf, and Y. Fujiwara, CSW 2019, Nara, Japan.
“Picosecond Time-Resolved Dynamics of Eu3+ Emission Wavelength Manipulation in GaN,” B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, V. Dierolf, and Y. Fujiwara, ICDS Spring Meeting 2019, Seattle, WA. (Poster).
“Towards Red GaN-Based Red LEDs: The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu” B. Mitchell, V. Dierolf, and Y. Fujiwara, ECCS Spring Meeting 2017, New Orleans, LA. (INVITED).
“The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu” B. Mitchell, W. Zhu, J. Poplawsky, A. Koizumi, V. Dierolf, and Y. Fujiwara, MRS Fall Meeting 2016, Boston, MA. (INVITED).
“A novel utilization of environmental O for developing device compatible Eu-doped GaN aimed at red LED applications” B. Mitchell, D. Timmerman, W. Zhu, V. Dierolf and Y. Fujiwara, ISGN-6 2015, Hamamatsu, Japan.
“The role of oxygen on the nature and stability of Eu centers in Eu doped gallium nitride" B. Mitchell, D. Timmerman, W. Zhu, Y. Fujiwara, and V. Dierolf, APS March Meeting 2015, San Antonio.
“The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers" B. Mitchell, J. Poplawsky, Y. Fujiwara, and V. Dierolf, APS March Meeting 2014, Denver, CO.
“Discrepancies in the Optical and Magneto-Optical Spectra of Eu:GaN: What is the Majority Site?” B. Mitchell, Y. Fujiwara, and V. Dierolf, NSF Magneto-Optics Workshop 2013 Nara, Japan.
“Modification of Eu Incorporation Sites by the Dissociation of Hydrogen Defect Complexes in Mg and Eu Co-doped Gallium Nitride” B. Mitchell, J. Poplawsky, D. Lee, Y. Fujiwara, and V. Dierolf, European CLEO 2013, Munich, Germany.(Theoretical version of Baltimore)
“A Modification of Eu Incorporation Sites by the Dissociation of Hydrogen Defect Complexes in Mg and Eu Co-doped Gallium Nitride” B. Mitchell, J. Poplawsky, Y. Fujiwara, and V. Dierolf, APS March Meeting 2013, Baltimore, MD.
“Magneto-Optical Studies of Rare Earth Doped III-V Nitrides” B. Mitchell, N. Woodward, J. Poplawsky, V. Dierolf, H.X. Jiang, APS March Meeting 2012, Boston, MA.
Conference Abstracts
“Direct Detection of Rare Earth Ion Distributions in Gallium Nitride” Brandon Mitchell, Dolf Timmerman, Hongxing Jiang, Volkmar Dierolf, Yasufumi Fujiwara, and Jonathan Poplawsky. Gordon Research Conference: Defects in Semiconductors. Colby-Sawyer College, NH, 2018.
University Address: 155 University Ave, West Chester, PA, 19383
University E-mail: [email protected]
EDUCATION
Lehigh University, Bethlehem, PA
Ph.D. in Physics April 2014
Dissertation: The Role of Defects on the Magneto-Optical Properties of Rare Earth Doped Gallium Nitride
Advisor: Volkmar Dierolf
Committee: Nelson Tansu, W. Beall Fowler, Michael Stavola, and John Huennekens
Lehigh University, Bethlehem, PA January 2012
M.S. in Physics
SUNY Fredonia, Fredonia, NY
B.A. in Adolescence Ed. May 2010
Area of concentration: Physics
Graduated: Summa Cum Laude
AWARDS
WCU Spotlight on Research Honoree – West Chester University 2023
WCU Spotlight on Research Honoree – West Chester University 2022
WCU Distinguished Research Award – West Chester University 2021
WCU Spotlight on Research Honoree – West Chester University 2019
WCU Spotlight on Research Honoree – West Chester University 2017
Young Scientist Award 2015
Sherman Fairchild Fellow 2012 – 2014
GAANN Fellow (Education) 2010 – 2011
Mihoko Yoshida Award Spring 2011
Hack Arroe Award Spring 2010
Physics Department Scholarship Award Spring 2009
PROFESSIONAL EXPERIENCE
Professor of Physics 2023 - Present
West Chester University, West Chester, PA, USA
Visiting Associate Professor of Materials Science 2022 - Present
Osaka University, Suita, Osaka, Japan
Associate Professor of Physics 2021 - 2023
West Chester University, West Chester, PA, USA
Visiting Research Scholar 2021 - Present
Lehigh University, Bethlehem, PA, USA
Director of Undergraduate Outreach & Engagement 2019 - Present
Center for Nanomaterials, West Chester University, West Chester, PA, USA
Assistant Professor of Physics 2016 - Present
West Chester University, West Chester, PA, USA
Assistant Professor of Physics 2014 - 2016
University of Mount Union, Alliance, OH, USA
Visiting Researcher/Research Professor 2014 - 2022 Osaka University, Suita, Osaka, Japan
PATENTS
- United States Patent: Y. Fujiwara, W. Zhu, A. Koizumi, B. Mitchell, T. Gregorkiewicz, “Nitride semiconductor substrate, manufacturing method therefor, and semiconductor device,” (US 11,133,435 B2) (Date: 9/28/2021).
- Korean Patent: Volkmar Dierolf, Brandon Mitchell, Ruoqiao Wei, Yasufumi Fujiwara, Tom Gregorkiewicz, Jun Tatebayashi, Shuhei Ichikawa, Dolf Timmerman, “색 조절 가능한 발광 다이오드 및 마이크로 LED 디스플레이,” (KO 1020210035034) (Date: March/31/2021).
- United States Patent: Volkmar Dierolf, Brandon Mitchell, Ruoqiao Wei, Yasufumi Fujiwara, Tom Gregorkiewicz, Jun Tatebayashi, Shuhei Ichikawa, Dolf Timmerman, “Color tunable light emission diode and micro led display,” Application Number: 16848175 (Date: March/25/2021).
- Japanese Patent: Volkmar Dierolf, Brandon Mitchell, Ruoqiao Wei, Yasufumi Fujiwara, Tom Gregorkiewicz, Jun Tatebayashi, Shuhei Ichikawa, Dolf Timmerman,” 発光色可変型発光半導体素子ならびにマイクロLEDディスプレイ,”(JP 2020-072042) (Date: 01/04/2021).
- Japanese Patent: 藤原康文(Fujiwara Yasufumi)、朱婉新(Wanxin Zhu)、小泉淳、Brandon Mitchell、Tom Gregorkiewicz, “窒化物半導体基板とその製造方法および半導体デバイス”, 特願2016-229410, 平成28年11月25日(出願日).
INTERNAL/EXTERNAL FUNDING
NSF ExpandQISE (Award #2328540) - $797,576 2023
NSF S-STEM (Award # 2322670) - $99,993 2023
NSF MRI (Award # 2319135) - $320,463 2023
DOE (Award #S215K230003) - $716,000 2023
NSF MRI (Award #2216272) - $391,730 2022
WCU RIMS - $3,999 2021
NSF RUI (Award #1748439) - $372,276 2021
NSF RUI (Award #2129183) - $449,600 2021
NSF S-STEM (Award #2028230) - $999,644 2021
WCU Distinguished Researcher Award - $2,000 2021
WCU Provost Research Grant - $9985 2021
WCU-COURSE Grant - $1,950 2020
WCU RIMS - $6,609 2019
WCU University Research Fund - $7,000 2017
PUBLICATIONS AND PAPERS In Progress:
- “Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy,” Fumikazu Murakami, Atsushi Takeo, Brandon Mitchell, Volkmar Dierolf, Yasufumi Fujiwara & Masayoshi Tonouchi, Commun Mater 4, 100 (2023).
- “Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs,” Z. Fang, J. Tatebayashi, R. Homi, M. Ogawa, H. Kajii, M. Kondow, K. Kitamura, B. Mitchell, S.Ichikawa, and Y. Fujiwara, Optics Continuum 2, 2178-2185 (2023).
- “Modeling Defect Mediated Color-tunability in LEDs with Eu-doped GaN-based Active Layers,” Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, and Volkmar Dierolf, J. Appl. Phys. 131, 045701 (2022).
- “On the connection between bound and scattering states of finite square-well potentials,” Ian Morrison, Robert Ekey, Ivan Biaggio, and Brandon Mitchell. Eur. J. Phys. 42, 025405 (2021).
- “Temporally modulated energy shuffling in highly interconnected nano-systems,” Brandon Mitchell, Hayley Austin, Dolf Timmerman, Volkmar Dierolf, and Yasufumi Fujiwara, Nanophotonics 10, 2 (2020).
- “Carrier dynamics and excitation of Eu3+ ions in GaN,” D. Timmerman, B. Mitchell, Shuhei Ichikawa, Masaya Nagai, Masaaki Ashida and Y. Fujiwara, Phys Rev. B. 101, 245306 (2020).
- “A FAN-C Exploration of RC Circuits,” R. Silar, M. Glasscock, R. Ekey and B. Mitchell, Phys. Teach. 58, 528 (2020).
- “Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN,” S. Copelman, M. Waite, H. Austin, D. Timmerman, J. Poplawsky, V. Dierolf, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and B. Mitchell, Proc. SPIE 11302, 113021Z (2020).
- “Excitation efficiency and limitations of the luminescence of Eu3+ ions in GaN,” D. Timmerman, B. Mitchell, Shuhei Ichikawa, Masaya Nagai, Masaaki Ashida and Y. Fujiwara, Phys. Rev. Appl. 13, 014044 (2020).
- “Direct Detection of Rare Earth Ion Distributions in Gallium Nitride and its Influence on Growth Morphology,” B. Mitchell, D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa and Y. Fujiwara, J. Appl. Phys. 127, 013102 (2020).
- “Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions,” Ruoqiao Wei, Brandon Mitchell, Dolf Timmerman, Tom Gregorkiewicz, Wanxin Zhu, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, and Volkmar Dierolf, Phys. Rev. B 100, 081201(R) (2019).
- “Color-tunablility in GaN LEDs Based on Atomic Emission Engineering,” Brandon Mitchell, Ruoqiao Wei, Junichi Takatsu, Dolf Timmerman, Tom Gregorkiewicz, Wanxin Zhu, Shuhei Ichikawa, Jun Tatebayashi, Yasufumi Fujiwara, and Volkmar Dierolf, ACS Photonics, 6, 1153−1161 (2019).
- “Measuring the Practical Particle-in-a-Box: Orthorhombic Perovskite Nanocrystals” B. Mitchell, E. Herrmann, J. Lin, L. Gomez, C. de Weerd, Y. Fujiwara, K. Suenaga, and T. Gregorkiewicz, Eur. J. Phys, 39, 055501 (2018).
- “Perspective: Toward efficient red GaN-based red light emitting diodes,” B. Mitchell, T. Gregorkiewicz, V. Dierolf, Y. Fujiwara, J. Appl. Phys. 123, 160901 (2018).
- “Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy” T. Inaba, T. Kojima, G. Yamashita, E. Matsubara, B. Mitchell, R. Miyagawa, O. Eryu, J. Tatebayashi, M. Ashida, and Y. Fujiwara, J. Appl. Phys. 123, 161419 (2018).
- “Re-Excitation of Trivalent Europium Ions Doped into Gallium Nitride Revealed through Photoluminescence under Pulsed Laser Excitation” W. Zhu, R. Wei, D. Timmerman, T. Gregorkiewicz, B. Mitchell, Y. Fujiwara, and V. Dierolf, ACS Photonics, 5, 875 (2018).
- “A Fan-tastic Quantitative Exploration of Ohm’s Law,” B. Mitchell, B. Ekey, R. McCullough, and W. Reitz, Phys. Teach. 56, 183 (2018).
- “Charge state of vacancy defects in Eu-doped GaN” B. Mitchell, N. Hernandez, D. Lee, A. Koizumi, Y. Fujiwara, V. Dierolf, Phys. Rev. B 96, 064308 (2017).
- “High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy” W. Zhu, B. Mitchell, D. Timmerman, A. Koizumi, T. Gregorkiewicz, Y. Fujiwara, MRS. Adv. 2, 159-164 (2017).
- “Emission enhancement and its mechanism of Eu-doped GaN by strain engineering” T. Inaba, B. Mitchell, A. Koizumi, and Y. Fujiwara, Opt. Mater. Express, 7, 1381- 1387 (2017).
- “Synthesis and Characterization of a Novel Liquid Eu Precursor (EuCppm2) Allowing for Valence Control of Eu ions Doped into GaN by OMVPE”, B. Mitchell, A. Koizumi, R. Wakamatsu, D. Lee, Y. Saitoh, D. Timmerman, Y. Kuboshima, T. Mogi, S. Higashi, K. Kikukawa, H. Ofuchi, T. Honma, and Y. Fujiwara, Mater. Chem. Phys. 193, 140 – 146 (2017).
- “Surface Morphology and Optical Properties of Eu3+ Ions Incorporated into N-polar GaN Grown by Organometallic Vapor Phase Epitaxy”, R. Fuji, B. Mitchell, A. Koizumi, T. Inaba, and Y. Fujiwara, J. Cry. Growth, 468, 862-865 (2017).
- “Detection of In Segregation in InGaN by using Eu as a Probe”, J. Takatsu, B. Mitchell, A. Koizumi, S. Yamanaka, M. Matsuda, T. Gregorkiewicz, T. Kojima, and Y. Fujiwara, J. Cry. Growth, 468, 831-834 (2017).
- “A Fan-tastic Alternative to Bulbs: Learning Circuits with Fans” B. Ekey, B. Mitchell, A. Edwards, R. McCullough, and W. Reitz, Phys. Teach. 54, 514 (2016).
- “Enhanced photo/electroluminescence properties of GaN:Eu through optimization of the growth conditions and defect environment” W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, A. Koizumi, and Y. Fujiwara, APL Mater. 4, 056103 (2016).
- “Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity” T. Inaba, D. Lee, R. Wakamatsu, B. Mitchell, T. Kojima, A. Capretti, T. Gregorkiewicz, A. Koizumi, and Y. Fujiwara, AIP Advances 6, 045105 (2016).
- “Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications” B. Mitchell et al., Sci Rep. 6, 18808 (2016).
- “Thermodynamics and kinetics of three Mg−H−VN complexes in Mg:GaN from combined first-principles calculation and experiment” D. Lee, B. Mitchell, Y. Fujiwara, and V. Dierolf, Phys. Rev. Lett. 112, 205501 (2014).
- “The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers" B. Mitchell, J. Poplawsky, D. Lee, A. Koizumi, Y. Fujiwara, V. Dierolf , J. Appl. Phys. 115, 204501 (2014).
- “Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: local hydrogen migration vs. activation of non-radiative channels” B. Mitchell, D. Lee, D. Lee, Y. Fujiwara, V. Dierolf , Appl. Phys. Lett. 103, 242105 (2013).
- “Investigation of Electron Beam Induced Migration of Hydrogen in Mg-doped GaN using Eu as a Probe” B. Mitchell, D. Lee, D. Lee, A. Koizumi, J. Poplawsky, Y. Fujiwara, V. Dierolf, Phys. Rev. B 88, 121202(R) (2013).
- “Crystal field and Zeeman splittings for energy levels of Nd3+ in hexagonal AlN” J. Gruber, G. Burdick, U. Vetter, B. Mitchell, V. Dierolf, H. Hofsäss, Opt. Mater. Express 2, 1176-1185 (2012).
- “Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields” N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf, Appl. Phys. Lett. 98, 011102 (2011).
- “Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center” N. T. Woodward, N. Nepal, B. Mitchell, I. W. Feng, J. Li, H. X. Jiang, J. Y. Lin, J. M. Zavada, and V. Dierolf, Appl. Phys. Lett. 99, 122506 (2011).
1) A. Koizumi, B. Mitchell, V. Dierolf, and Y. Fujiwara, “Growth of Eu-doped GaN and its Magneto-Optical Properties,” in: Transition metal and rare earth doping of semiconductor materials: synthesis, magnetic properties, and room temperature spintronics, (ed. J. Zavada, I. Fergison, and V. Dierolf, Elsevier, UK, 2016).
2) N. Nepal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, and J. M. Zavada, “MOCVD growth of Er-doped III-N and optical-magnetic characterization,” in: Transition metal and rare earth doping of semiconductor materials: synthesis, magnetic properties, and room temperature spintronics, (ed. J. Zavada, I. Fergison, and V. Dierolf, Elsevier, UK, 2016).
Oral Presentations
“Control of Atomic Emission from Eu3+ ions Doped into GaN for Color-Tunable LED” B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, Y. Fujiwara, and V. Dierolf, SemiconNano 2019, Kobe, Japan. (INVITED)
“Incorporation site dependent excitation dynamics of Eu3+ ions in Eu-doped GaN,” V. Dierolf, B. Mitchell, D. Timmerman, T. Gregorkiewicz, and Y. Fujiwara, ICDS 2019, Seattle, WA.
Color-tunablility in Eu doped GaN LEDs Based on Atomic Emission Manipulation of Under Current Injection,” B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, V. Dierolf, and Y. Fujiwara, CSW 2019, Nara, Japan.
“Picosecond Time-Resolved Dynamics of Eu3+ Emission Wavelength Manipulation in GaN,” B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, V. Dierolf, and Y. Fujiwara, ICDS Spring Meeting 2019, Seattle, WA. (Poster).
“Towards Red GaN-Based Red LEDs: The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu” B. Mitchell, V. Dierolf, and Y. Fujiwara, ECCS Spring Meeting 2017, New Orleans, LA. (INVITED).
“The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu” B. Mitchell, W. Zhu, J. Poplawsky, A. Koizumi, V. Dierolf, and Y. Fujiwara, MRS Fall Meeting 2016, Boston, MA. (INVITED).
“A novel utilization of environmental O for developing device compatible Eu-doped GaN aimed at red LED applications” B. Mitchell, D. Timmerman, W. Zhu, V. Dierolf and Y. Fujiwara, ISGN-6 2015, Hamamatsu, Japan.
“The role of oxygen on the nature and stability of Eu centers in Eu doped gallium nitride" B. Mitchell, D. Timmerman, W. Zhu, Y. Fujiwara, and V. Dierolf, APS March Meeting 2015, San Antonio.
“The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers" B. Mitchell, J. Poplawsky, Y. Fujiwara, and V. Dierolf, APS March Meeting 2014, Denver, CO.
“Discrepancies in the Optical and Magneto-Optical Spectra of Eu:GaN: What is the Majority Site?” B. Mitchell, Y. Fujiwara, and V. Dierolf, NSF Magneto-Optics Workshop 2013 Nara, Japan.
“Modification of Eu Incorporation Sites by the Dissociation of Hydrogen Defect Complexes in Mg and Eu Co-doped Gallium Nitride” B. Mitchell, J. Poplawsky, D. Lee, Y. Fujiwara, and V. Dierolf, European CLEO 2013, Munich, Germany.(Theoretical version of Baltimore)
“A Modification of Eu Incorporation Sites by the Dissociation of Hydrogen Defect Complexes in Mg and Eu Co-doped Gallium Nitride” B. Mitchell, J. Poplawsky, Y. Fujiwara, and V. Dierolf, APS March Meeting 2013, Baltimore, MD.
“Magneto-Optical Studies of Rare Earth Doped III-V Nitrides” B. Mitchell, N. Woodward, J. Poplawsky, V. Dierolf, H.X. Jiang, APS March Meeting 2012, Boston, MA.
Conference Abstracts
“Direct Detection of Rare Earth Ion Distributions in Gallium Nitride” Brandon Mitchell, Dolf Timmerman, Hongxing Jiang, Volkmar Dierolf, Yasufumi Fujiwara, and Jonathan Poplawsky. Gordon Research Conference: Defects in Semiconductors. Colby-Sawyer College, NH, 2018.